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NTMFS4H01NT3G

NTMFS4H01NT3G

MOSFET N-CH 25V 54A/334A 5DFN

2508056016Y2

2508056016Y2

MULTI-LAYER CHIP BEAD

NTMFS4H01NT3G

NTMFS4H01NT3G

Image is for reference, please contact us to get the real picture

Part No :

NTMFS4H01NT3G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 25V 54A/334A 5DFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
698669 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2024
PDF
NTMFS4H01NT3G PDF
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:54A (Ta), 334A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:0.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:85 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5693 pF @ 12 V
FET Feature:-
Power Dissipation (Max):3.2W (Ta), 125W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN
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