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IPN60R3K4CEATMA1

IPN60R3K4CEATMA1

Image is for reference, please contact us to get the real picture

Part No :

IPN60R3K4CEATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 600V 2.6A SOT223
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14285 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 29 - Oct 03 2024
PDF
IPN60R3K4CEATMA1 PDF
Type Description
Series:CoolMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs:4.6 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:93 pF @ 100 V
FET Feature:Super Junction
Power Dissipation (Max):5W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT223
Package / Case:SOT-223-3
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