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FQPF6N80C

FQPF6N80C

MOSFET N-CH 800V 5.5A TO220F

FQPF6N80C

FQPF6N80C

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Part No :

FQPF6N80C

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 800V 5.5A TO220F
Catalog
Transistors - FETs, MOSFETs - Single
Availability
458545 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jan 31 - Feb 04 2025
PDF
FQPF6N80C PDF
Type Description
Series:QFET®
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.5Ohm @ 2.75A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1310 pF @ 25 V
FET Feature:-
Power Dissipation (Max):51W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220F
Package / Case:TO-220-3 Full Pack
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