MOSFET N-CH 200V 3.9A 8SOIC
Type | Description |
---|---|
Series: | UltraFET™ |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200 V |
Current - Continuous Drain (Id) @ 25°C: | 3.9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Rds On (Max) @ Id, Vgs: | 70mOhm @ 3.9A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 46 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2535 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 2.5W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SOIC |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRFR18N15DTRLPRochester Electronics |
HEXFET SMPS POWER MOSFET |
|
BSP129H6906XTSA1IR (Infineon Technologies) |
MOSFET N-CH 240V 350MA SOT223-4 |
|
IXTK90N25L2Wickmann / Littelfuse |
MOSFET N-CH 250V 90A TO264 |
|
FQD6N40TMRochester Electronics |
MOSFET N-CH 400V 4.2A DPAK |
|
SSM6K406TU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 4.4A UF6 |
|
NTP110N65S3HFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 30A TO220-3 |
|
IRFR120ZPBFRochester Electronics |
MOSFET N-CH 100V 8.7A DPAK |
|
SUD19P06-60-GE3Vishay / Siliconix |
MOSFET P-CH 60V 18.3A TO252 |
|
AUIRF4104STRLRochester Electronics |
MOSFET N-CH 40V 75A D2PAK |
|
SCT30N120STMicroelectronics |
SICFET N-CH 1200V 40A HIP247 |
|
FQI9N50CTURochester Electronics |
MOSFET N-CH 500V 9A I2PAK |
|
IPU80R1K4P7AKMA1IR (Infineon Technologies) |
MOSFET N-CH 800V 4A TO251-3 |
|
NTD3055L104T4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 12A DPAK |