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IPB60R299CPAATMA1

IPB60R299CPAATMA1

MOSFET N-CH 600V 11A TO263-3

IPB60R299CPAATMA1

IPB60R299CPAATMA1

Image is for reference, please contact us to get the real picture

Part No :

IPB60R299CPAATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 600V 11A TO263-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10974 pieces
Shipped from
HK warehouse
Expected Shipping Date
Apr 18 - Apr 22 2025
PDF
IPB60R299CPAATMA1 PDF
Type Description
Series:Automotive, AEC-Q101, CoolMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:299mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id:3.5V @ 440µA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1100 pF @ 100 V
FET Feature:-
Power Dissipation (Max):96W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB60R299CPAATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPB60R299CPAATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPB60R299CPAATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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