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FQA24N60

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Part No :: FQA24N60

Manufacturer: Rochester Electronics

Description: POWER FIELD-EFFECT TRANSISTOR, 2

Catalog: Transistors - FETs, MOSFETs - Single

Availability: 16990 pieces

Shipped from: HK warehouse

Expected Shipping Date: Feb 18 - Feb 22 2025

PDF: FQA24N60 PDF

Type	Description
Series:	QFET®
Package:	Bulk
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	600 V
Current - Continuous Drain (Id) @ 25°C:	23.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	240mOhm @ 11.8A, 10V
Vgs(th) (Max) @ Id:	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	145 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	5.5 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	310W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-3PN
Package / Case:	TO-3P-3, SC-65-3

FQA24N60 is available at GangBo-ic.com, Please review product page below for detailed information, including FQA24N60 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQA24N60 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

Phone: 00852-52612101

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