MOSFET N-CH 200V 3.3A TO220-3
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200 V |
Current - Continuous Drain (Id) @ 25°C: | 3.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Rds On (Max) @ Id, Vgs: | 1.5Ohm @ 1.65A, 5V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 9 nC @ 5 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 240 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 33W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220-3 |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
PSMN015-100P,127Nexperia |
MOSFET N-CH 100V 75A TO220AB |
|
NVTFS6H854NWFTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 9.5A/44A 8WDFN |
|
APT38F80B2Roving Networks / Microchip Technology |
MOSFET N-CH 800V 41A T-MAX |
|
FQA24N60Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 2 |
|
BUK761R6-40E,118Rochester Electronics |
MOSFET N-CH 40V 120A D2PAK |
|
TK6A65D(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 6A TO220SIS |
|
SIHG16N50C-E3Vishay / Siliconix |
MOSFET N-CH 500V 16A TO247AC |
|
STF20N60M2-EPSTMicroelectronics |
MOSFET N-CH 600V 13A TO220FP |
|
IRFR9110Rochester Electronics |
MOSFET P-CH 100V 3.1A DPAK |
|
MCT06P10-TPMicro Commercial Components (MCC) |
MOSFET P-CH 100V 6A SOT223 |
|
STDLED656STMicroelectronics |
MOSFET N-CH 650V 6A DPAK |
|
FQP13N06Rochester Electronics |
MOSFET N-CH 60V 13A TO220-3 |
|
APT29F80JRoving Networks / Microchip Technology |
MOSFET N-CH 800V 31A ISOTOP |