MOSFET N-CH 600V 16A PWRFLAT HV
Type | Description |
---|---|
Series: | MDmesh™ M2-EP |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600 V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 205mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id: | 4.75V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 29 nC @ 10 V |
Vgs (Max): | ±25V |
Input Capacitance (Ciss) (Max) @ Vds: | 1090 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 125W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PowerFlat™ (8x8) HV |
Package / Case: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
RFD7N10LERochester Electronics |
N-CHANNEL POWER MOSFET |
|
BSL211SPH6327XTSA1IR (Infineon Technologies) |
MOSFET P-CH 20V 4.7A TSOP-6 |
|
PMV50XPRNexperia |
MOSFET P-CH 20V 3.6A TO236AB |
|
STD6N90K5STMicroelectronics |
MOSFET N-CH 900V 6A DPAK |
|
STW50N65DM2AGSTMicroelectronics |
MOSFET N-CH 650V 28A TO247 |
|
FDA69N25Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 6 |
|
DMPH3010LK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CHANNEL 30V 50A TO252 |
|
RFG40N10Rochester Electronics |
MOSFET N-CH 100V 40A TO247-3 |
|
APT10025JVFRRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 34A ISOTOP |
|
NTMFS4845NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 13.7A/115A 5DFN |
|
SPB04N50C3ATMA1Rochester Electronics |
MOSFET N-CH 560V 4.5A TO263-3 |
|
AON6794Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 39A/85A 8DFN |
|
AUIRFR8401IR (Infineon Technologies) |
MOSFET N-CH 40V 100A DPAK |