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STW50N65DM2AG

STW50N65DM2AG

MOSFET N-CH 650V 28A TO247

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STW50N65DM2AG

STW50N65DM2AG

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Part No :

STW50N65DM2AG

Manufacturer
STMicroelectronics
Description
MOSFET N-CH 650V 28A TO247
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11188 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
STW50N65DM2AG PDF
Type Description
Series:Automotive, AEC-Q101, MDmesh™ DM2
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:28A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:87mOhm @ 19A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:70 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:3200 pF @ 100 V
FET Feature:-
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247
Package / Case:TO-247-3
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