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FDA69N25

FDA69N25

POWER FIELD-EFFECT TRANSISTOR, 6

FDA69N25

FDA69N25

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Part No :

FDA69N25

Manufacturer
Rochester Electronics
Description
POWER FIELD-EFFECT TRANSISTOR, 6
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10300 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 28 - Jul 02 2024
PDF
FDA69N25 PDF
Type Description
Series:UniFET™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:69A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:41mOhm @ 34.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:100 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:4.64 pF @ 25 V
FET Feature:-
Power Dissipation (Max):480W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3PN
Package / Case:TO-3P-3, SC-65-3
FDA69N25 is available at GangBo-ic.com, Please review product page below for detailed information, including FDA69N25 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDA69N25 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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