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RCD051N20TL

RCD051N20TL

MOSFET N-CH 200V 5A CPT3

RCD051N20TL

RCD051N20TL

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Part No :

RCD051N20TL

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 200V 5A CPT3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
757975 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 02 - Feb 06 2025
PDF
RCD051N20TL PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Not For New Designs
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:760mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id:5.25V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:8.3 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:330 pF @ 25 V
FET Feature:-
Power Dissipation (Max):850mW (Ta), 20W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:CPT3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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