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BSS209PWH6327XTSA1

BSS209PWH6327XTSA1

MOSFET P-CH 20V 630MA SOT323-3

BSS209PWH6327XTSA1

BSS209PWH6327XTSA1

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Part No :

BSS209PWH6327XTSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET P-CH 20V 630MA SOT323-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
17217 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 02 - Feb 06 2025
PDF
BSS209PWH6327XTSA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:630mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:550mOhm @ 630mA, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 3.5µA
Gate Charge (Qg) (Max) @ Vgs:1.3 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:115 pF @ 15 V
FET Feature:-
Power Dissipation (Max):300mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT323-3
Package / Case:SC-70, SOT-323
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