MOSFET N-CH 55V 61A TO220
Type | Description |
---|---|
Series: | HEXFET® |
Package: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55 V |
Current - Continuous Drain (Id) @ 25°C: | 61A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 11mOhm @ 37A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 64 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1.72 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 91W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220 |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BSS209PWH6327XTSA1IR (Infineon Technologies) |
MOSFET P-CH 20V 630MA SOT323-3 |
|
PSMN9R0-30YL,115Rochester Electronics |
MOSFET N-CH 30V 61A LFPAK56 |
|
RQ5E070BNTCLROHM Semiconductor |
MOSFET N-CH 30V 7A TSMT3 |
|
FDPF8D5N10CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 76A TO220F |
|
IPB020N08N5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 120A D2PAK |
|
STP2N80K5STMicroelectronics |
MOSFET N-CH 800V 2A TO220 |
|
AON7518Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 24A 8DFN |
|
2SK4066-DL-1EXRochester Electronics |
MOSFET N-CH 60V 100A TO263-2 |
|
IPA60R180P7SXKSA1IR (Infineon Technologies) |
MOSFET N-CHANNEL 600V 18A TO220 |
|
IPB031NE7N3GRochester Electronics |
IPB031NE7 - 12V-300V N-CHANNEL P |
|
RJK0393DPA-00#J53Rochester Electronics |
MOSFET N-CH 30V 40A 8WPAK |
|
RM80N30DFRectron USA |
MOSFET N-CHANNEL 30V 81A 8DFN |
|
SI7850ADP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 10.3A/12A PPAK |