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STW19NM60N

STW19NM60N

MOSFET N-CH 600V 13A TO247

STW19NM60N

STW19NM60N

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Part No :

STW19NM60N

Manufacturer
STMicroelectronics
Description
MOSFET N-CH 600V 13A TO247
Catalog
Transistors - FETs, MOSFETs - Single
Availability
617361 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
STW19NM60N PDF
Type Description
Series:Automotive, AEC-Q101, MDmesh™ II
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:285mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1000 pF @ 50 V
FET Feature:-
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247
Package / Case:TO-247-3
STW19NM60N is available at GangBo-ic.com, Please review product page below for detailed information, including STW19NM60N price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for STW19NM60N to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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