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FDP18N20F

FDP18N20F

MOSFET N-CH 200V 18A TO220-3

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Q-2U0150001012I

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FDP18N20F

FDP18N20F

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Part No :

FDP18N20F

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 200V 18A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14142000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 25 - Sep 29 2024
PDF
FDP18N20F PDF
Type Description
Series:UniFET™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:145mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:26 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1180 pF @ 25 V
FET Feature:-
Power Dissipation (Max):100W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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