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AUIRF3808S

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Part No :: AUIRF3808S

Manufacturer: Rochester Electronics

Description: MOSFET N-CH 75V 106A D2PAK

Catalog: Transistors - FETs, MOSFETs - Single

Availability: 17426 pieces

Shipped from: HK warehouse

Expected Shipping Date: Nov 24 - Nov 28 2024

PDF: AUIRF3808S PDF

Type	Description
Series:	Automotive, AEC-Q101, HEXFET®
Package:	Bulk
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	75 V
Current - Continuous Drain (Id) @ 25°C:	106A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	7mOhm @ 82A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	220 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	5310 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	200W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D2PAK
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

AUIRF3808S is available at GangBo-ic.com, Please review product page below for detailed information, including AUIRF3808S price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for AUIRF3808S to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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