MOSFET N-CH 25V 100A 8VSON
Type | Description |
---|---|
Series: | NexFET™ |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 25 V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 1.15mOhm @ 40A, 10V |
Vgs(th) (Max) @ Id: | 1.9V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 29 nC @ 4.5 V |
Vgs (Max): | +16V, -12V |
Input Capacitance (Ciss) (Max) @ Vds: | 4100 pF @ 12.5 V |
FET Feature: | - |
Power Dissipation (Max): | 3.2W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-VSON-CLIP (5x6) |
Package / Case: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
NDD01N60-1GRochester Electronics |
MOSFET N-CH 600V 1.5A IPAK |
|
AUIRFS3307ZRochester Electronics |
AUTOMOTIVE HEXFET N CHANNEL |
|
NVMFS6H818NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 20A/123A 5DFN |
|
IXFQ50N60P3Wickmann / Littelfuse |
MOSFET N-CH 600V 50A TO3P |
|
IPD25DP06NMATMA1IR (Infineon Technologies) |
MOSFET P-CH 60V 6.5A TO252-3 |
|
IPD70R360P7SAUMA1IR (Infineon Technologies) |
MOSFET N-CH 700V 12.5A TO252-3 |
|
2SK4197FSRochester Electronics |
MOSFET N-CH 600V 3.3A TO220-3 |
|
IRF614STRRPBFVishay / Siliconix |
MOSFET N-CH 250V 2.7A D2PAK |
|
RJ1L08CGNTLLROHM Semiconductor |
MOSFET N-CH 60V 80A LPTL |
|
CSD18533Q5ATTexas Instruments |
MOSFET N-CH 60V 17A/100A 8VSON |
|
SUD09P10-195-GE3Vishay / Siliconix |
MOSFET P-CH 100V 8.8A TO252 |
|
APT60M80L2VRGRoving Networks / Microchip Technology |
MOSFET N-CH 600V 65A 264 MAX |
|
FQPF19N10Rochester Electronics |
MOSFET N-CH 100V 13.6A TO220F |