CAP CER 0.33UF 500V X7R 2225
AUTOMOTIVE HEXFET N CHANNEL
Type | Description |
---|---|
Series: | HEXFET® |
Package: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 75 V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 5.8mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs: | 110 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 4.75 pF @ 50 V |
FET Feature: | - |
Power Dissipation (Max): | 230W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D2PAK |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
NVMFS6H818NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 20A/123A 5DFN |
|
IXFQ50N60P3Wickmann / Littelfuse |
MOSFET N-CH 600V 50A TO3P |
|
IPD25DP06NMATMA1IR (Infineon Technologies) |
MOSFET P-CH 60V 6.5A TO252-3 |
|
IPD70R360P7SAUMA1IR (Infineon Technologies) |
MOSFET N-CH 700V 12.5A TO252-3 |
|
2SK4197FSRochester Electronics |
MOSFET N-CH 600V 3.3A TO220-3 |
|
IRF614STRRPBFVishay / Siliconix |
MOSFET N-CH 250V 2.7A D2PAK |
|
RJ1L08CGNTLLROHM Semiconductor |
MOSFET N-CH 60V 80A LPTL |
|
CSD18533Q5ATTexas Instruments |
MOSFET N-CH 60V 17A/100A 8VSON |
|
SUD09P10-195-GE3Vishay / Siliconix |
MOSFET P-CH 100V 8.8A TO252 |
|
APT60M80L2VRGRoving Networks / Microchip Technology |
MOSFET N-CH 600V 65A 264 MAX |
|
FQPF19N10Rochester Electronics |
MOSFET N-CH 100V 13.6A TO220F |
|
2N7002ET7GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 260MA SOT23-3 |
|
PSMN3R2-25YLC,115Rochester Electronics |
MOSFET N-CH 25V 100A LFPAK56 |