MOSFET N-CH 60V 17A/100A 8VSON
Type | Description |
---|---|
Series: | NexFET™ |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60 V |
Current - Continuous Drain (Id) @ 25°C: | 17A (Ta), 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 5.9mOhm @ 18A, 10V |
Vgs(th) (Max) @ Id: | 2.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 36 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2750 pF @ 30 V |
FET Feature: | - |
Power Dissipation (Max): | 3.2W (Ta), 116W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-VSONP (5x6) |
Package / Case: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SUD09P10-195-GE3Vishay / Siliconix |
MOSFET P-CH 100V 8.8A TO252 |
|
APT60M80L2VRGRoving Networks / Microchip Technology |
MOSFET N-CH 600V 65A 264 MAX |
|
FQPF19N10Rochester Electronics |
MOSFET N-CH 100V 13.6A TO220F |
|
2N7002ET7GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 260MA SOT23-3 |
|
PSMN3R2-25YLC,115Rochester Electronics |
MOSFET N-CH 25V 100A LFPAK56 |
|
IRF7457PBFRochester Electronics |
SMPS HEXFET POWER MOSFET |
|
IRFR120ZTRPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 8.7A DPAK |
|
SUD35N10-26P-E3Vishay / Siliconix |
MOSFET N-CH 100V 35A TO252 |
|
APT20M20B2FLLGRoving Networks / Microchip Technology |
MOSFET N-CH 200V 100A T-MAX |
|
BSP129L6327Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDMS3600SRochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
SPB02N60C3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPD12CN10NGATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 67A TO252-3 |