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IPB024N08N5ATMA1

IPB024N08N5ATMA1

MOSFET N-CH 80V 120A D2PAK

IPB024N08N5ATMA1

IPB024N08N5ATMA1

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Part No :

IPB024N08N5ATMA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 80V 120A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10604 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
PDF
IPB024N08N5ATMA1 PDF
Type Description
Series:OptiMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:3.8V @ 154µA
Gate Charge (Qg) (Max) @ Vgs:123 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8.97 pF @ 40 V
FET Feature:-
Power Dissipation (Max):214W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB024N08N5ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPB024N08N5ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPB024N08N5ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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