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IXFH12N100P

IXFH12N100P

MOSFET N-CH 1000V 12A TO247AD

IXFH12N100P

IXFH12N100P

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Part No :

IXFH12N100P

Manufacturer
Wickmann / Littelfuse
Description
MOSFET N-CH 1000V 12A TO247AD
Catalog
Transistors - FETs, MOSFETs - Single
Availability
166616 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 06 - Nov 10 2024
PDF
IXFH12N100P PDF
Type Description
Series:HiPerFET™, PolarP2™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.05Ohm @ 6A, 10V
Vgs(th) (Max) @ Id:5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:4080 pF @ 25 V
FET Feature:-
Power Dissipation (Max):463W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247AD (IXFH)
Package / Case:TO-247-3
IXFH12N100P is available at GangBo-ic.com, Please review product page below for detailed information, including IXFH12N100P price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IXFH12N100P to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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