MOSFET N-CH 60V 32A TO220-3
Type | Description |
---|---|
Series: | QFET® |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60 V |
Current - Continuous Drain (Id) @ 25°C: | 32A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Rds On (Max) @ Id, Vgs: | 35mOhm @ 16A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 20 nC @ 5 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1040 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 79W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220-3 |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SCTWA10N120STMicroelectronics |
IC POWER MOSFET 1200V HIP247 |
|
DMT6004LPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 22A PWRDI5060 |
|
SIHH14N65EF-T1-GE3Vishay / Siliconix |
MOSFET N-CH 650V 15A PPAK 8 X 8 |
|
IRF830PBF-BE3Vishay / Siliconix |
MOSFET N-CH 500V 4.5A TO220AB |
|
RQ3E080BNTBROHM Semiconductor |
MOSFET N-CH 30V 8A 8HSMT |
|
STT4P3LLH6STMicroelectronics |
MOSFET P-CH 30V 4A SOT23-6 |
|
IXFH12N100PWickmann / Littelfuse |
MOSFET N-CH 1000V 12A TO247AD |
|
FDMS86152Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 14A/45A POWER56 |
|
IPC100N04S5L1R5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 100A 8TDSON-34 |
|
FDFC2P100Rochester Electronics |
MOSFET P-CH 20V 3A SUPERSOT6 |
|
RT1A045APTCRROHM Semiconductor |
MOSFET P-CH 12V 4.5A 8TSST |
|
FDB3682Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 6A/32A TO263 |
|
SQR70090ELR_GE3Vishay / Siliconix |
MOSFET N-CH 100V 86A DPAK |