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STL3N65M2

STL3N65M2

MOSFET N-CH 650V 2.3A POWERFLAT

466565-3

466565-3

HDM SPEMPR100F G

STL3N65M2

STL3N65M2

Image is for reference, please contact us to get the real picture

Part No :

STL3N65M2

Manufacturer
STMicroelectronics
Description
MOSFET N-CH 650V 2.3A POWERFLAT
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11104 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
PDF
STL3N65M2 PDF
Type Description
Series:MDmesh™ M2
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:2.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.8Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:155 pF @ 100 V
FET Feature:-
Power Dissipation (Max):22W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (3.3x3.3)
Package / Case:8-PowerVDFN
STL3N65M2 is available at GangBo-ic.com, Please review product page below for detailed information, including STL3N65M2 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for STL3N65M2 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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