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FDU8882

FDU8882

MOSFET N-CH 30V 12.6A/55A IPAK

FDU8882

FDU8882

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Part No :

FDU8882

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 30V 12.6A/55A IPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
886588 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 25 - Sep 29 2024
PDF
FDU8882 PDF
Type Description
Series:PowerTrench®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:12.6A (Ta), 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:11.5mOhm @ 35A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:33 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1.26 pF @ 15 V
FET Feature:-
Power Dissipation (Max):55W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
FDU8882 is available at GangBo-ic.com, Please review product page below for detailed information, including FDU8882 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDU8882 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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