MOSFET P-CH 400V 1.8A DPAK
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 400 V |
Current - Continuous Drain (Id) @ 25°C: | 1.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 7Ohm @ 1.1A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 13 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 270 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 50W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-PAK (TO-252AA) |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
TJ15S06M3L(T6L1,NQToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 60V 15A DPAK |
|
TK040N65Z,S1FToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 57A TO247 |
|
TPH2010FNH,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 250V 5.6A 8SOP |
|
SIHD180N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 19A TO252AA |
|
AUIRLS3036-7TRLIR (Infineon Technologies) |
MOSFET N-CH 60V 240A D2PAK |
|
IPB120N04S401ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 120A D2PAK |
|
STD45P4LLF6AGSTMicroelectronics |
MOSFET P-CH 40V 50A DPAK |
|
STU3LN80K5STMicroelectronics |
MOSFET N-CHANNEL 800V 2A IPAK |
|
DMN2005UFGQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 18A PWRDI3333 |
|
IRF630NPBFIR (Infineon Technologies) |
MOSFET N-CH 200V 9.3A TO220AB |
|
FDB0630N1507LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 130A TO263-7 |
|
STU2N80K5STMicroelectronics |
MOSFET N-CH 800V 2A IPAK |
|
IRLR120NTRLPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 10A DPAK |