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FDP2670

FDP2670

MOSFET N-CH 200V 19A TO220-3

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FDP2670

FDP2670

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Part No :

FDP2670

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 200V 19A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
16893 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
FDP2670 PDF
Type Description
Series:PowerTrench®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:19A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:130mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:38 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1.32 pF @ 100 V
FET Feature:-
Power Dissipation (Max):93W (Tc)
Operating Temperature:-65°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
FDP2670 is available at GangBo-ic.com, Please review product page below for detailed information, including FDP2670 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDP2670 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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