MOSFET P-CH 100V 1A SOT223-4
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100 V |
Current - Continuous Drain (Id) @ 25°C: | 1A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.2Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 10 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 335 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 2.52W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-223-4 |
Package / Case: | TO-261-4, TO-261AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
NTMFS6B05NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 16A/104A 5DFN |
|
NTD60N02R-35GRochester Electronics |
MOSFET N-CH 25V 8.5A/32A IPAK |
|
RQ7E110AJTCRROHM Semiconductor |
MOSFET N-CH 30V 11A TSMT8 |
|
IRFH7004TRPBFIR (Infineon Technologies) |
MOSFET N-CH 40V 100A 8PQFN |
|
RM30N100LDRectron USA |
MOSFET N-CH 100V 30A TO252-2 |
|
NTMFS5C612NLT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 36A/235A 5DFN |
|
BSL302SNL6327Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
VP0550N3-GRoving Networks / Microchip Technology |
MOSFET P-CH 500V 54MA TO92-3 |
|
DMP2040UFDF-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 13A 6UDFN |
|
IPW65R150CFDFKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 22.4A TO247-3 |
|
SI2312BDS-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 3.9A SOT23-3 |
|
IRFR110TRPBFVishay / Siliconix |
MOSFET N-CH 100V 4.3A DPAK |
|
CSD22206WTexas Instruments |
MOSFET P-CH 8V 5A 9DSBGA |