MOSFET P-CH 20V 13A 6UDFN
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20 V |
Current - Continuous Drain (Id) @ 25°C: | 13A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 32mOhm @ 8.9A, 4.5V |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 19 nC @ 8 V |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | 834 pF @ 10 V |
FET Feature: | - |
Power Dissipation (Max): | 1.8W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | U-DFN2020-6 (Type F) |
Package / Case: | 6-UDFN Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IPW65R150CFDFKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 22.4A TO247-3 |
|
SI2312BDS-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 3.9A SOT23-3 |
|
IRFR110TRPBFVishay / Siliconix |
MOSFET N-CH 100V 4.3A DPAK |
|
CSD22206WTexas Instruments |
MOSFET P-CH 8V 5A 9DSBGA |
|
BSC889N03MSGRochester Electronics |
N-CHANNEL POWER MOSFET |
|
AOI7N60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 7A TO251A |
|
NTTFS4840NTAGRochester Electronics |
MOSFET N-CH 30V 4.6A/26A 8WDFN |
|
SFW9Z34TMRochester Electronics |
MOSFET P-CH 60V 18A D2PAK |
|
APT47M60JRoving Networks / Microchip Technology |
MOSFET N-CH 600V 49A ISOTOP |
|
SIHB12N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 12A D2PAK |
|
NVMFS5C468NT1GRochester Electronics |
MOSFET N-CH 40V 12A/35A 5DFN |
|
SI3456DDV-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 6.3A 6TSOP |
|
AOTF42S60LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 39A TO220-3F |