MOSFET N-CH 30V 200MA SC59-3
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 200mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V |
Rds On (Max) @ Id, Vgs: | 2Ohm @ 50MA, 2.5V |
Vgs(th) (Max) @ Id: | 1.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 70 pF @ 3 V |
FET Feature: | - |
Power Dissipation (Max): | 200mW (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SC-59-3 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
TPIC1505DWRRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
SIHG018N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 99A TO247AC |
|
SI4435DYTRPBFIR (Infineon Technologies) |
MOSFET P-CH 30V 8A 8SO |
|
HUF76145S3SRochester Electronics |
N-CHANNEL POWER MOSFET |
|
PSMN4R4-30MLC,115Nexperia |
MOSFET N-CH 30V 70A LFPAK33 |
|
FDD6685Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 11A/40A TO252 |
|
RQ3E130MNTB1ROHM Semiconductor |
MOSFET N-CH 30V 13A HSMT8 |
|
ZVP4424ASTZZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 240V 200MA E-LINE |
|
NTHS5445T1Rochester Electronics |
MOSFET P-CH 8V 5.2A CHIPFET |
|
AUIRLR3705ZRochester Electronics |
AUTOMOTIVE HEXFET N-CHANNEL |
|
SI4178DY-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 12A 8SO |
|
PSMN5R0-40MLHXNexperia |
MOSFET N-CH 40V 85A LFPAK33 |
|
NTD6416ANT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 17A DPAK |