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RQ3E130MNTB1

RQ3E130MNTB1

MOSFET N-CH 30V 13A HSMT8

RQ3E130MNTB1

RQ3E130MNTB1

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Part No :

RQ3E130MNTB1

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 30V 13A HSMT8
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12988 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
RQ3E130MNTB1 PDF
Type Description
Series:*
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:13A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:8.1mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:14 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:840 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2W (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-HSMT (3.2x3)
Package / Case:8-PowerVDFN
RQ3E130MNTB1 is available at GangBo-ic.com, Please review product page below for detailed information, including RQ3E130MNTB1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RQ3E130MNTB1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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