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SI4435DYTRPBF

SI4435DYTRPBF

MOSFET P-CH 30V 8A 8SO

SI4435DYTRPBF

SI4435DYTRPBF

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Part No :

SI4435DYTRPBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET P-CH 30V 8A 8SO
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10836 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 04 - Nov 08 2024
PDF
SI4435DYTRPBF PDF
Type Description
Series:HEXFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:20mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2320 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
SI4435DYTRPBF is available at GangBo-ic.com, Please review product page below for detailed information, including SI4435DYTRPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SI4435DYTRPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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[email protected]

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