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IPP80R1K4P7XKSA1

IPP80R1K4P7XKSA1

MOSFET N-CH 800V 4A TO220-3

IPP80R1K4P7XKSA1

IPP80R1K4P7XKSA1

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Part No :

IPP80R1K4P7XKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 800V 4A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10594 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2024
PDF
IPP80R1K4P7XKSA1 PDF
Type Description
Series:CoolMOS™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.4Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id:3.5V @ 70µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:250 pF @ 500 V
FET Feature:Super Junction
Power Dissipation (Max):32W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
IPP80R1K4P7XKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPP80R1K4P7XKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPP80R1K4P7XKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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