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SI2369BDS-T1-GE3

SI2369BDS-T1-GE3

MOSFET P-CH 30V 5.6A/7.5A SOT23

SI2369BDS-T1-GE3

SI2369BDS-T1-GE3

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Part No :

SI2369BDS-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 30V 5.6A/7.5A SOT23
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14628 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2024
Type Description
Series:TrenchFET® Gen IV
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:5.6A (Ta), 7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:27mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19.5 nC @ 10 V
Vgs (Max):+16V, -20V
Input Capacitance (Ciss) (Max) @ Vds:745 pF @ 15 V
FET Feature:-
Power Dissipation (Max):1.3W (Ta), 2.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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