MOSFET N-CH 100V 62A TO220AB
Type | Description |
---|---|
Series: | HEXFET® |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100 V |
Current - Continuous Drain (Id) @ 25°C: | 62A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 13.5mOhm @ 37A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: | 87 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 3180 pF @ 50 V |
FET Feature: | - |
Power Dissipation (Max): | 140W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BUK754R7-60E,127Rochester Electronics |
MOSFET N-CH 60V 100A TO220AB |
|
NTD4813N-35GRochester Electronics |
MOSFET N-CH 30V 7.6A/40A IPAK |
|
CSD18513Q5ATexas Instruments |
MOSFET N-CH 40V 124A 8VSON |
|
FQU5N50CTU-WSSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 4A IPAK |
|
FDMC7672Rochester Electronics |
MOSFET N-CH 30V 16.9A/20A 8MLP |
|
CSD19531KCSTexas Instruments |
MOSFET N-CH 100V 100A TO220-3 |
|
IRF840LPBFVishay / Siliconix |
MOSFET N-CH 500V 8A TO263AB |
|
IPP50R350CPXKSA1Rochester Electronics |
COOLMOS 10A, 500V N-CHANNEL |
|
TSM024NA04LCR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 40V 170A 8PDFN |
|
STP80NF55-06STMicroelectronics |
MOSFET N-CH 55V 80A TO220AB |
|
FCD7N60TM-WSSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 7A DPAK |
|
IRF1018ESTRLPBFIR (Infineon Technologies) |
MOSFET N-CH 60V 79A D2PAK |
|
TPN11006PL,LQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 26A 8TSON |