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BSC117N08NS5ATMA1

BSC117N08NS5ATMA1

MOSFET N-CH 80V 49A TDSON

11645CS

11645CS

COMP O=1.281,L= 4.00,W= .064

BSC117N08NS5ATMA1

BSC117N08NS5ATMA1

Image is for reference, please contact us to get the real picture

Part No :

BSC117N08NS5ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 80V 49A TDSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
61106 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
PDF
BSC117N08NS5ATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:49A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:11.7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:3.8V @ 22µA
Gate Charge (Qg) (Max) @ Vgs:18 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1300 pF @ 40 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-7
Package / Case:8-PowerTDFN
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