MOSFET N-CH 30V 39A 8PDFN
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Not For New Designs |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 39A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 11.7mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 9.2 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 562 pF @ 15 V |
FET Feature: | - |
Power Dissipation (Max): | 33W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-PDFN (5x6) |
Package / Case: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
TSM2301BCX RFGTSC (Taiwan Semiconductor) |
MOSFET P-CHANNEL 20V 2.8A SOT23 |
|
IXFA130N10T2-TRLWickmann / Littelfuse |
MOSFET N-CH 100V 130A TO263 |
|
IXFX80N50PWickmann / Littelfuse |
MOSFET N-CH 500V 80A PLUS247-3 |
|
SSM3J135TU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 3A UFM |
|
FCD360N65S3R0Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 10A DPAK |
|
STI30N65M5STMicroelectronics |
MOSFET N-CH 650V 22A I2PAK |
|
RTR040N03HZGTLROHM Semiconductor |
MOSFET N-CH 30V 4A TSMT3 |
|
AOD280A60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 14A TO252 |
|
FDD10N20LZTMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 7.6A DPAK |
|
SISS94DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 200V 5.4A/19.5A PPAK |
|
SIHF12N60E-E3Vishay / Siliconix |
MOSFET N-CH 600V 12A TO220 |
|
NTD5865NLT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 46A DPAK |
|
BUK7Y102-100B,115Nexperia |
MOSFET N-CH 100V 15A LFPAK56 |