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SISS94DN-T1-GE3

SISS94DN-T1-GE3

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SISS94DN-T1-GE3

SISS94DN-T1-GE3

Image is for reference, please contact us to get the real picture

Part No :

SISS94DN-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 200V 5.4A/19.5A PPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12657 pieces
Shipped from
HK warehouse
Expected Shipping Date
Mar 25 - Mar 29 2025
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:5.4A (Ta), 19.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):7.5V, 10V
Rds On (Max) @ Id, Vgs:75mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:350 pF @ 100 V
FET Feature:-
Power Dissipation (Max):5.1W (Ta), 65.8W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® 1212-8S
Package / Case:PowerPAK® 1212-8S
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