MOSFET N-CH 500V 80A PLUS247-3
Type | Description |
---|---|
Series: | HiPerFET™, PolarHT™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500 V |
Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 65mOhm @ 40A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs: | 197 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 12700 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 1040W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PLUS247™-3 |
Package / Case: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SSM3J135TU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 3A UFM |
|
FCD360N65S3R0Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 10A DPAK |
|
STI30N65M5STMicroelectronics |
MOSFET N-CH 650V 22A I2PAK |
|
RTR040N03HZGTLROHM Semiconductor |
MOSFET N-CH 30V 4A TSMT3 |
|
AOD280A60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 14A TO252 |
|
FDD10N20LZTMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 7.6A DPAK |
|
SISS94DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 200V 5.4A/19.5A PPAK |
|
SIHF12N60E-E3Vishay / Siliconix |
MOSFET N-CH 600V 12A TO220 |
|
NTD5865NLT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 46A DPAK |
|
BUK7Y102-100B,115Nexperia |
MOSFET N-CH 100V 15A LFPAK56 |
|
SIHF9630STRL-GE3Vishay / Siliconix |
MOSFET P-CH 200V 6.5A D2PAK |
|
TPH2900ENH,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 200V 33A 8SOP |
|
NDD04N60Z-1GRochester Electronics |
POWER MOSFET 600V |