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IPB35N12S3L26ATMA1

IPB35N12S3L26ATMA1

MOSFET N-CH 120V 35A TO263-3-2

IPB35N12S3L26ATMA1

IPB35N12S3L26ATMA1

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Part No :

IPB35N12S3L26ATMA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 120V 35A TO263-3-2
Catalog
Transistors - FETs, MOSFETs - Single
Availability
23000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
PDF
IPB35N12S3L26ATMA1 PDF
Type Description
Series:Automotive, AEC-Q101, OptiMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):120 V
Current - Continuous Drain (Id) @ 25°C:35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:26.3mOhm @ 35A, 10V
Vgs(th) (Max) @ Id:2.4V @ 39µA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2700 pF @ 25 V
FET Feature:-
Power Dissipation (Max):71W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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