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STU1HN60K3

STU1HN60K3

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Part No :

STU1HN60K3

Manufacturer
STMicroelectronics
Description
MOSFET N-CH 600V 1.2A IPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
466346 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 29 - Dec 03 2024
PDF
STU1HN60K3 PDF
Type Description
Series:SuperMESH3™
Package:Tube
Part Status:Not For New Designs
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:1.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:8Ohm @ 600mA, 10V
Vgs(th) (Max) @ Id:4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:9.5 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:140 pF @ 50 V
FET Feature:-
Power Dissipation (Max):27W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
STU1HN60K3 is available at GangBo-ic.com, Please review product page below for detailed information, including STU1HN60K3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for STU1HN60K3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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