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FQI4N80TU

FQI4N80TU

MOSFET N-CH 800V 3.9A I2PAK

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ECC40DJWN

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FQI4N80TU

FQI4N80TU

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Part No :

FQI4N80TU

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 800V 3.9A I2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12146 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
FQI4N80TU PDF
Type Description
Series:QFET®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.6Ohm @ 1.95A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:880 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.13W (Ta), 130W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK (TO-262)
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
FQI4N80TU is available at GangBo-ic.com, Please review product page below for detailed information, including FQI4N80TU price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQI4N80TU to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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