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R6006KND3TL1

R6006KND3TL1

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R6006KND3TL1

R6006KND3TL1

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Part No :

R6006KND3TL1

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 600V 6A TO252
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12470 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 18 - May 22 2024
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:830mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:5.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:350 pF @ 25 V
FET Feature:-
Power Dissipation (Max):70W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
R6006KND3TL1 is available at GangBo-ic.com, Please review product page below for detailed information, including R6006KND3TL1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for R6006KND3TL1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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