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NP80N04PDG-E1B-AY

NP80N04PDG-E1B-AY

MOSFET N-CH 40V 80A TO263-3

NP80N04PDG-E1B-AY

NP80N04PDG-E1B-AY

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Part No :

NP80N04PDG-E1B-AY

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 40V 80A TO263-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:4.5mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:135 nC @ 10 V
Vgs (Max):-
Input Capacitance (Ciss) (Max) @ Vds:6.9 pF @ 25 V
FET Feature:-
Power Dissipation (Max):1.8W (Ta), 115W (Tc)
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263-3
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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