MOSFET P-CH 100V 6.6A TO252
Type | Description |
---|---|
Series: | HEXFET® |
Package: | Bulk |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100 V |
Current - Continuous Drain (Id) @ 25°C: | 6.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | 480mOhm @ 3.9A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 27 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 350 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 40W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-TO252 |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
TSM60NB150CF C0GTSC (Taiwan Semiconductor) |
MOSFET N-CH 600V 24A ITO220S |
|
DMN65D9L-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 335MA SOT23 |
|
IRF740APBF-BE3Vishay / Siliconix |
MOSFET N-CH 400V 10A TO220AB |
|
BUK7506-55A,127Rochester Electronics |
MOSFET N-CH 55V 75A TO220AB |
|
IPT60R055CFD7XTMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 44A 8HSOF |
|
ZXMP3F30FHTAZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 2.8A SOT23 |
|
AOL1240Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 40V 19A/69A ULTRASO8 |
|
BUK7M22-80EXNexperia |
MOSFET N-CH 80V 37A LFPAK33 |
|
IRLB3034PBFIR (Infineon Technologies) |
MOSFET N-CH 40V 195A TO220AB |
|
FQI17N08LTURochester Electronics |
MOSFET N-CH 80V 16.5A I2PAK |
|
FQPF13N50TRochester Electronics |
MOSFET N-CH 500V 12.5A TO220F |
|
IPB090N06N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 50A D2PAK |
|
IRLR2905PBFRochester Electronics |
HEXFET POWER MOSFET |