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IPB090N06N3GATMA1

IPB090N06N3GATMA1

MOSFET N-CH 60V 50A D2PAK

PS-094-2-OR

PS-094-2-OR

SLEEVE, 0.094 IN DIA X 2 IN W

IPB090N06N3GATMA1

IPB090N06N3GATMA1

Image is for reference, please contact us to get the real picture

Part No :

IPB090N06N3GATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 60V 50A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
416041 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
IPB090N06N3GATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:4V @ 34µA
Gate Charge (Qg) (Max) @ Vgs:36 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2900 pF @ 30 V
FET Feature:-
Power Dissipation (Max):71W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB090N06N3GATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPB090N06N3GATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPB090N06N3GATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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