MOSFET N-CH 60V 50A D2PAK
Type | Description |
---|---|
Series: | OptiMOS™ |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60 V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 9mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 34µA |
Gate Charge (Qg) (Max) @ Vgs: | 36 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2900 pF @ 30 V |
FET Feature: | - |
Power Dissipation (Max): | 71W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D²PAK (TO-263AB) |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRLR2905PBFRochester Electronics |
HEXFET POWER MOSFET |
|
FQD3N50CTMRochester Electronics |
MOSFET N-CH 500V 2.5A DPAK |
|
IRF241Rochester Electronics |
MOSFET N-CH 150V 18A TO204AE |
|
SFU9214TURochester Electronics |
P-CHANNEL POWER MOSFET |
|
TN2124K1-GRoving Networks / Microchip Technology |
MOSFET N-CH 240V 134MA TO236AB |
|
FQPF4N20Rochester Electronics |
MOSFET N-CH 200V 2.8A TO220F |
|
IPB60R125CFD7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 18A TO263-3-2 |
|
MMFT2N25ET3Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
NX138BKWFNexperia |
MOSFET N-CHANNEL 60V 210MA SC70 |
|
APT6015LVFRGRoving Networks / Microchip Technology |
MOSFET N-CH 600V 38A TO264 |
|
DN2540N3-GRoving Networks / Microchip Technology |
MOSFET N-CH 400V 120MA TO92 |
|
IRF7204TRPBFIR (Infineon Technologies) |
MOSFET P-CH 20V 5.3A 8SO |
|
IRF830SPBFVishay / Siliconix |
MOSFET N-CH 500V 4.5A D2PAK |