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FQI17N08LTU

FQI17N08LTU

MOSFET N-CH 80V 16.5A I2PAK

FQI17N08LTU

FQI17N08LTU

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Part No :

FQI17N08LTU

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 80V 16.5A I2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 02 - Feb 06 2025
PDF
FQI17N08LTU PDF
Type Description
Series:QFET®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:16.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:100mOhm @ 8.25A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:11.5 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:520 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.75W (Ta), 65W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK (TO-262)
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
FQI17N08LTU is available at GangBo-ic.com, Please review product page below for detailed information, including FQI17N08LTU price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQI17N08LTU to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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