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SIT8209AC-21-18S-166.000000T

SIT8209AC-21-18S-166.000000T

MEMS OSC XO 166.0000MHZ LVCMOS

SIHH24N65E-T1-GE3

SIHH24N65E-T1-GE3

MOSFET N-CH 650V 23A PPAK 8 X 8

SIHH24N65E-T1-GE3

SIHH24N65E-T1-GE3

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Part No :

SIHH24N65E-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 650V 23A PPAK 8 X 8
Catalog
Transistors - FETs, MOSFETs - Single
Availability
13977 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2024
PDF
SIHH24N65E-T1-GE3 PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:23A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:150mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:116 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2814 pF @ 100 V
FET Feature:-
Power Dissipation (Max):202W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® 8 x 8
Package / Case:8-PowerTDFN
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