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IPP65R115CFD7AAKSA1

IPP65R115CFD7AAKSA1

MOSFET N-CH 650V 21A TO220-3

ES0919-0225

ES0919-0225

DOUBLE-SIDED NON-VENT DIVIDED SH

IPP65R115CFD7AAKSA1

IPP65R115CFD7AAKSA1

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Part No :

IPP65R115CFD7AAKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 650V 21A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10500 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2024
Type Description
Series:Automotive, AEC-Q101, CoolMOS™ CFD7
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:21A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:115mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id:4.5V @ 490µA
Gate Charge (Qg) (Max) @ Vgs:41 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1950 pF @ 400 V
FET Feature:-
Power Dissipation (Max):114W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
IPP65R115CFD7AAKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPP65R115CFD7AAKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPP65R115CFD7AAKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

Phone: 00852-52612101

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