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RYC002N05T316

RYC002N05T316

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Part No :

RYC002N05T316

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CHANNEL 50V 200MA SST3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
28740 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2024
PDF
RYC002N05T316 PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):50 V
Current - Continuous Drain (Id) @ 25°C:200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V
Rds On (Max) @ Id, Vgs:2.2Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id:800mV @ 1mA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:26 pF @ 10 V
FET Feature:-
Power Dissipation (Max):350mW (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SST3
Package / Case:TO-236-3, SC-59, SOT-23-3
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