MOSFET P-CH 40V 10A PPAK SC70-6
Type | Description |
---|---|
Series: | Automotive, AEC-Q101, TrenchFET® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40 V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 35mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 33 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1815 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 13.6W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PowerPAK® SC-70-6 Single |
Package / Case: | PowerPAK® SC-70-6 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FQPF4N90CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 900V 4A TO220F |
|
FCPF190N60-F152Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 20.2A TO220F |
|
IPW60R165CPFKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 21A TO247-3 |
|
APT50M75JLLU3Roving Networks / Microchip Technology |
MOSFET N-CH 500V 51A SOT227 |
|
SIHH24N65E-T1-GE3Vishay / Siliconix |
MOSFET N-CH 650V 23A PPAK 8 X 8 |
|
TSM180N03PQ33 RGGTSC (Taiwan Semiconductor) |
MOSFET N-CH 30V 25A 8PDFN |
|
IXTH16N20D2Wickmann / Littelfuse |
MOSFET N-CH 200V 16A TO247 |
|
IRFI830GPBFVishay / Siliconix |
MOSFET N-CH 500V 3.1A TO220-3 |
|
DMG4712SSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 11.2A 8SOP |
|
TK160F10N1L,LXGQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 100V 160A TO220SM |
|
IPP65R115CFD7AAKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 21A TO220-3 |
|
BSS126H6327XTSA2IR (Infineon Technologies) |
MOSFET N-CH 600V 21MA SOT23-3 |
|
FDMC7664Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 18.8A/24A 8MLP |